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HFP630
July 2005
BVDSS = 200 V
HFP630
200V N-Channel MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22 nC (Typ ) (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.34 (Typ.) @VGS=10V 100% Avalanche Tested
RDS(on) typ = 0.34 ID = 9 A
TO-220
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Drain Source Voltage Drain Current Drain Current Drain Current Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt
TC=25 unless otherwise specified
Parameter - Continuous (TC = 25) - Continuous (TC = 100) - Pulsed
(Note 1)
Value 200 9.0 5.7 36 30
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns W W/
160 9.0 90 7.2 5.5 72 0.57 -55 to +150 300
Power Dissipation (TC = 25) - Derate above 25 Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
Thermal Resistance Characteristics
Symbol RJC RCS RJA Junction-to-Case Case-to-Sink Junction-to-Ambient J i A bi Parameter Typ. -0.5 -Max. 1.74 -62.5 62 5 /W Units
SEMIHOW REV.A0,July 2005
HFP630
Electrical Characteristics TC=25 C
Symbol y Parameter
unless otherwise specified
Test Conditions
Min
Typ y
Max
Units
On Characteristics
VGS RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 VGS = 10 V, ID = 4.5 A 2.0 --0.34 4.0 0.4 V
Off Characteristics
BVDSS Drain-Source Breakdown V lt DiS B kd Voltage VGS = 0 V ID = 250 V, ID = 250 , Referenced to25 VDS = 200 V, VGS = 0 V VDS = 160 V, TC = 125 VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 200 ------0.2 ------1 10 100 -100 V V/ BVDSS Breakdown Voltage Temperature Coefficient /TJ IDSS IGSSF IGSSR Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage C Gt Bd L k Current, t Reverse
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---550 85 22 720 110 29
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
(Note 4,5)
VDS = 100 V, ID = 9.0 A, RG = 25
--------
11 70 60 65 22 4.0 11
25 140 120 130 30 ---
nC nC nC
VDS = 160 V, ID = 9.0 A, VGS = 10 V
(Note 4,5)
Source-Drain Diode Maximum Ratings and Characteristics
IS ISM VSD trr Qrr Continuous Source-Drain Diode Forward Current Pulsed Source-Drain Diode Forward Current Source Drain Source-Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS = 9 0 A VGS = 0 V 9.0 A, IS = 9.0 A, VGS = 0 V diF/dt = 100 A/s (Note 4) --------140 0.87 9.0 36 1.5 15 --A V C
Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=3mH, IAS=9.0A, VDD=50V, RG=25, Starting TJ =25C 3. ISD9.0A, di/dt300A/s, VDDBVDSS , Starting TJ =25 C 4. Pulse Test P l 4 P l T t : Pulse Width 300s, Duty C l 2% 300 D t Cycle 5. Essentially Independent of Operating Temperature
SEMIHOW REV.A0,July 2005
HFP630
Typical Characteristics
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On Resistance Variation vs Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature
12
1000 900 800
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
VDS = 40V
VGS, Gate-Source Voltage [V] e
10
VDS = 100V VDS = 160V
Capacitanc [pF] ces
700 600 500
Ciss
8
Coss
Note ; 1. VGS = 0 V 2. f = 1 MHz
6
400 300 200 100 0 -1 10
0 1
Crss
4
2
Note : ID = 9A
0
10
10
0
3
6
9
12
15
18
21
24
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
SEMIHOW REV.A0,July 2005
HFP630
Typical Characteristics
(continued)
Figure 7. Breakdown Voltage Variation vs Temperature
Figure 8. On-Resistance Variation vs Temperature
10
8
ID, Dra Current [A] ain
6
4
2
0 25
50
75
100
125
150
TC, Case Temperature []
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs C Case T Temperature t
10
0
D = 0 .5 0 .2 0 .1
N o te s : 1 . Z J C t) = 1 .7 4 /W M a x . ( 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z J C t) (
Z JC Therma Response (t), al
10
-1
0 .0 5 0 0 .0 2 0 .0 1 s in g le p u ls e
PDM t1 t2
10
0
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
1
t 1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ]
Figure 11. Transient Thermal Response Curve Fi 11 T i t Th lR C
SEMIHOW REV.A0,July 2005
HFP630
Fig 12. Gate Charge Test Circuit & Waveform
50K 12V 200nF 300nF
Same Type as DUT VDS
VGS Qg
10V
VGS
Qgs
Qgd
DUT
3mA
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
VDS RG
RL VDD
( 0.5 rated VDS )
VDS
90%
10V
DUT
Vin
10%
td(on) t on
tr
td(off) t off
tf
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
VDS ID RG
L VDD BVDSS IAS
BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD
ID (t) DUT VDD
tp
10V
VDS (t) Time
SEMIHOW REV.A0,July 2005
HFP630
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+ VDS _
IS
L
Driver RG
Same Type as DUT
VDD
VGS
* dv/dt controlled by RG * IS controlled by pulse period
VGS ( Driver )
Gate Pulse Width G D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
IS ( DUT ) IRM
di/dt
Body Diode Reverse Current
VDS ( DUT )
Body Diode Recovery dv/dt
Vf
VDD
Body Diode Forward Voltage Drop
SEMIHOW REV.A0,July 2005
HFP630
Package Dimension
TOTO-220 (A)
9.900.20
. 3
60
0
0 .2
4.500.20 1.300.20
15.700.20
20 2.800.2
9.190.20
6.500.20
13.080.20
0.800.20 2.54typ 2.54typ 0.500.20
3.020.20
1.270.20 1.520.20
2.400.20 2 400 20
SEMIHOW REV.A0,July 2005
HFP630
TOTO-220 (B)
0.20
. 3
84
0 .2 0
4.570.20 1.270.20
15.440.20
0 2.740.20
9.140.20
6 6.300.20
2.67 2 670.20 13.280.20 1.270.20 2.670.20 2.54typ 2.54typ 0.810.20 0.400.20
SEMIHOW REV.A0,July 2005

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